RLT83500GOP
TECHNICAL DATA
High Power Infrared Laser Diode
Lasing wavelength:
830 nm typ.
Max. optical power:
500 mW, cw
Emitting Aperture:
1x50
μm²
Package:
9 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode
3) n.c.
Specification (Tc = 25°C)
CHARACTERISTIC
MIN
0.5
≤0.25
≤0.95
≤2.1
≥0.80
0.80
830 ±10
≤3
0.3
10
40
TE
2.0
10 - 30
-10 – 70
UNIT
W
A
A
V
W/A
Ω
nm
nm
nm/°C
deg
deg
V
°C
°C
Optical Output Power
Threshold Current
Operation Current
Operation Voltage
Slope Efficiency
Series Resistance
Central Wavelength
Spectral Width
Wavelength Temperature Coefficient
Beam Divergence
Beam Divergence
Polarization
Reverse Voltage
Operating Temperature
Storage Temperature
03.08.2010
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ROITHNER [ Roithner LaserTechnik GmbH ]
