ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT8340MG
TECHNICAL DATA
High Power Infrared Laserdiode
Structure:
AlGaAs double heterostructure
Lasing wavelength:
830 nm typ.
Max. optical power:
40 mW, single mode
Package:
5.6 mm
PIN CONNECTION:
1) Laserdiode cathode
2) Laserdiode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
op
Storage Temperature
T
stg
RATING
40
2
30
-10 .. +50
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP MAX
Threshold Current
I
th
cw
15
25
Operation Current
I
op
P
o
= 40 mW
70
80
90
Operation Voltage
V
op
P
o
= 40 mW
1.8
2.2
Lasing Wavelength
P
o
= 40 mW
820 830 840
λ
p
Beam Divergence
P
o
= 40 mW
8
10
11
θ
//
Beam Divergence
P
o
= 40 mW
25
31
40
θ
⊥
Monitor Current
I
m
P
o
= 40 mW, V
r
=5V 400 600 800
UNIT
mA
mA
V
nm
°
°
µA
ROITHNER [ Roithner LaserTechnik GmbH ]
