RLT790-80MGS 参数 Datasheet PDF下载

RLT790-80MGS

TECHNICAL DATA

High Power Infrared Laser Diode

Features

•

•

•

•

Lasing Mode Structure: single mode

Peak Wavelength : typ. 790 nm

Optical Output Power: 80 mW

Package: 5.6 mm

Electrical Connection

Pin Configuration

n-type

PIN

1

2

3

Function

LD Anode

LD Cathode, PD Anode

PD Cathode

Bottom View

Absolute Maximum Ratings (T

C

=25°C)

Item

CW Output Power

Operating Case Temperature

Storage Temperature

Symbol

P

O

T

C

T

stg

Value

80

-10 … +60

-40 … +85

Unit

mW

°C

°C

Specifications (T

C

=25°C)

Item

Optical Specification

CW Output Power

Peak Wavelength

Spectral Width (FWHM)

FWHM Beam Divergence

Emitting Aperature

Chip Cavity Length

Lifetime

Electrical Specification

Threshold Current

Operating Current

Slope Efficiency

Operating Voltage

Monitor Current

Symbol

P

O

λ

P

Δλ

θ

║

θ

┴

WxH

Min.

-

780

-

-

-

Typ.

80

785

0.5

8

25

5x1

0.75

-

30

105

1.1

2.0

1.2

Max.

-

790

2

10

30

Unit

mW

nm

nm

deg

deg

µm

mm

hour

mA

mA

W/A

V

mA

100000

I

th

I

op

η

U

op

I

m

-

-

1.0

-

-

-

50

130

-

2.8

1.6

The above specifications are for reference purpose only and subjected to change without prior notice.

15.07.2013

RLT790-80MGS

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