RLT6530G
Features
•
•
•
•
•
Visible Laser Diode
ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC )
DESCRIPTION
Optical Power (mW)
Operation Temperature (ºC)
Storage Temperature (ºC)
LD Reverse Voltage (V)
PD Reverse Voltage (V)
SYMBOL
Po
Top
Tstg
VLDR
VPDR
RATED VALUE
30
-10 to +40
-40 to +85
2
30
Index Guided MQW Structure
Wavelength : 655 nm (Typ.)
Optical Power : 30 mW CW
Threshold Current : 50 mA ( Typ. )
Standard Package : 9.0 mm Ø
OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25ºC )
DESCRIPTION
Lasing Wavelength (nm)
Threshold Current (mA)
Operation Current (mA)
Operation Voltage (V)
Monitor Current (µA)
Slope Efficiency (mW/mA)
Beam Divergence
¦
(º)
Beam Divergence
⊥
(º)
Astigmatism (µm)
SYMBOL
λ
p
Ith
Iop
Vop
Im
ç
θ
¦
θ⊥
As
MIN.
645
30
60
2.0
10
0.3
8
25
***
TYPICAL
655
50
80
2.2
-
0.4
10
31
11
MAX.
665
70
100
2.7
-
0.7
11
40
***
TEST CONDITION
Po=30mW
Po=30mW
Po=30mW
Po=30mW
Po=30mW, VR=5V
***
Po=30mW
Po=30mW
Po=30mW, NA=0.4
ROITHNER [ Roithner LaserTechnik GmbH ]
