ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: rlt@mcb.at
http://www.roithner-laser.com
RLT6510G
TECHNICAL DATA
High Power Visible Wavelength Laserdiode
Structure:
AlGaInP, index guided
Lasing wavelength:
650 nm typ.
Max. optical power:
10 mW
Package:
9 mm
LASERDIODE
MUST BE COOLED!
NOTE!
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
Absolute Maximum Ratings (Tc=25°C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operation Case Temperature
T
C
Storage Temperature
T
STG
RATING
10
2
30
-10 .. +40
-40 .. +85
UNIT
mW
V
V
°C
°C
Optical-Electrical Characteristics (Tc = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 10 mW
Operating Voltage
V
op
P
o
= 10 mW
Lasing Wavelength
λ
p
P
o
= 10 mW
Beam Divergence
θ
//
P
o
= 10 mW
Beam Divergence
θ
⊥
P
o
= 10 mW
Monitor Current
I
m
P
o
= 10 mW
Astigmatism
A
s
P
o
= 10 mW
MIN
25
645
5
25
TYP
35
55
2.5
650
8
31
20
5
MAX
50
80
2.7
660
11
37
UNIT
mA
mA
V
nm
°
°
µA
µm
ROITHNER [ Roithner LaserTechnik GmbH ]
