QL85D6SA
TECHNICAL DATA
Infrared Laser Diode
Features
•
•
•
•
AlGaAs laser diode
Peak Wavelength: 850 nm
Optical Ouput Power: 5 mW
Package: 5.6 mm, with photo diode
Electrical Connection
Pin Configuration
m-type
PIN
1
2
3
Function
LD Cathode
LD Anode, PD Cathode
PD Anode
Bottom View
Absolute Maximum Ratings (T
C
=25°C)
Item
CW Output Power
LD Reverse Voltage
PD Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P
O
V
R
(LD)
V
R
(PD)
T
C
T
stg
Value
7
2
30
-10 … +60
-40 … +85
Unit
mW
V
V
°C
°C
Specifications (T
C
=25°C)
Item
Optical Specifications
CW Output Power
Peak Wavelength *
FWHM Beam Divergence
Emission Point Accuracy
Astigmatism
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
* Measuring specifications.
Symbol
P
O
λ
P
θ
║
θ
┴
Δθ
║
Δθ
┴
A
s
I
th
I
op
η
U
op
I
m
Min.
-
845
7
25
-2.0
-3.0
Typ.
5
850
9
32
-
-
Max.
-
855
12
40
2.0
3.0
15
20
30
0.9
2.5
0.6
Unit
mW
nm
deg
deg
deg
deg
µm
mA
mA
W/A
V
mA
Angle
5
15
0.4
-
0.2
10
20
0.7
1.9
0.4
The above specifications are for reference purpose only and subjected to change without prior notice.
09.05.2012
QL85D6SA
1 of 5
ROITHNER [ Roithner LaserTechnik GmbH ]
