LED780-xxAU
1) Specifications
(1) Chip material
(2) Peak wavelength
(3) Package
(4) Lead frame
Infrared LED Lamp
This series of LED780-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated
in various types of epoxy lens which offer different design settings.
On forward bias, it emits a high power radiation of typical 18 mW with a peak wavelngth at 780 nm.
AlGaAs
780 nm
Clear epoxy resin
Soldered
2) Absolute Maximum Ratings
Item
Symbol Maximum Rated Value
Power Dissipation
P
D
190
Forward Current
I
F
100
Pulse Forward Current
I
FP
500
Reverse Voltage
V
R
5
Operating Temperature
T
OPR
-30 ~ +85
Storage Temperature
T
STG
-30 ~ +100
Soldering Temperature
T
SOL
260
3) Electro-Optical Characteristics [Ta=25°C]
Item
Symbol Condition
Forward Voltage
V
F
I
F
=50mA
Reverse Current
I
R
V
R
=5V
Total Radiated Power
P
O
I
F
=50mA
l
P
Peak Wavelength
I
F
=50mA
Dl
Half Width
I
F
=50mA
Rise Time
tr
I
F
=50mA
Fall Time
tf
I
F
=50mA
Unit
mW
mA
mA
V
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
Minimum
Typical
1.75
18.0
780
30
80
80
Maximum
1.95
10
13.0
Unit
V
uA
mW
nm
nm
ns
ns
4) Characteristics of Brightness [Ta=25°C]
Viewing
Radiant Intensity I
F
=50mA unit: mW/sr
Type
Half Angle
Minimum
Typical
Maximum
LED780-01AU
±10°
90
LED780-02AU
±5°
100
LED780-03AU
±15°
70
LED780-04AU
±20°
35
LED780-05AU
±40°
10
LED780-06AU
±6°
110
±25°(Long)
LED780-09AU
60
±15°(Short)
LED780-33AU
40
±15°
LED780-36AU
±30°
20
‡ Radiant Intensity is measured by Tektronix J-16.
‡
Total Radiated Power is measured by Photodyne #500.
Outer Dimension
Dimension Figure
f5
1
f5
2
f5
3
f5
4
f5
5
f5
6
f5
7
Oval
f3
9
f3
10
ROITHNER [ Roithner LaserTechnik GmbH ]
