SMD - LED
Radiation
Type
Technology
ELS-880-638
Case
Infrared
Description
SMD - LED on
silicon carrier
AlGaAs/AlGaAs
Applications
waterclear, plastic lens
High-power, double-hetero AlGaAs struc-
ture with removed substrate on heatsink
for „up side down“ mounting
3,9
2,75
Photoelectric barriers, remote controls, illu-
mination for CCD-cameras and night-vision
systems, alarm guard systems, fibre optics
1,9
2,
2
Ø
2
4
all dimensions in mm, tolerance:
±
0,05 mm
Maximum Ratings
T
amb
= 25°C, unless otherwise specified
Parameter
DC forward current
Peak forward current
Reverse voltage
Operating temperature range
Junction temperature
Test Conditions
on heatsink
t
p
≤
10 µs, f
≤
500 Hz
I
R
= 10 µA
Symbol
I
F
I
FRM
V
R
T
amb
T
jmax
Value
250
2000
5
-25 to +85
100
Unit
mA
mA
V
°C
°C
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Parameter
Forward voltage
Forward voltage
Radiant power
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
Temperature coefficient of
forward voltage
Thermal resistance junc-
tion/heatsink
Test Condi-
tions
I
F
= 100 mA
I
F
= 250 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
Sym-
bol
V
F
V
F
Φ
e
λ
p
∆λ
0.5
ϕ
t
r
, t
f
TKV
F
R
th
-2
50
15
860
20
880
30
30
35
25
890
Min
Typ
1.6
Max
1.8
2.0
Unit
V
V
mW
nm
nm
deg
ns
mV/K
K/W
0,5
2,2
rev.04/01
ROITHNER LASERTECHNIK
A-1040 Wien, Tel.: +43-1-586 52 43, Fax.: +43-1-586 41 43, office@roithner-laser.com
ROITHNER [ Roithner LaserTechnik GmbH ]
