AlGaAs
Invisible Laser Diode
2004/05 ver. 1.0
ADL-80Y01TX/TZ
★
808nm 200mW 5.6
φ
TO-Type
High Power Laser Diode
•
Features
1. Standard 5.6φTO-type: easy for design, assembly and integration
2. Low operation current
3. Long operation lifetime, MTTF>10000 hrs
4. Cost effective
•
Applications
1. Pumps for solid state lasers
2. Miniature low power green laser
3. Medical use
•
Absolute maximum ratings
Parameter
Light output power
Reverse voltage (LD)
Case temperature
Storage temperature
Symbol Condition
P
O
CW
V
RL
-
T
C
-
T
S
-
Rating
200
2
-10~+50
-40~+75
Unit
mW
V
o
C
o
C
TX
TZ
•
Electrical and optical characteristics (T
c
=25
o
C)
Parameter
Peak wavelength
Threshold current
Operating current
Operating voltage
Differential efficiency
Parallel divergence angle
Perpendicular divergence angle
Emission point accuracy
Symbol
λ
I
th
I
op
V
op
η
θ
//
θ
⊥
ΔxΔyΔz
Min.
805
-
-
-
0.8
-
-
-
Typ.
808
55
260
1.7
1
9
41
-
Max.
811
75
280
1.9
-
15
48
±80
Unit
nm
mA
mA
V
mW/mA
degree
degree
um
Conditions
P
o
=200mW
P
o
=200mW
P
o
=200mW
P
o
=150-200mW
P
o
=200mW
Precautions
1. Do not operate the device above the maximum rating condition, even momentarily. It may cause unexpected permanent damage to the device.
2. Semiconductor laser device is very sensitive to electrostatic discharge. High voltage spike current may change the characteristics of the device, or malfunction at any time during
its service period. Therefore, proper measures for preventing electrostatic discharge are strongly recommended.
3. Effective heat sink can help the device operates under a more relax condition; as a result, a more stable characteristics and better reliability can be achieved. So it is
recommended that always apply proper heat sink before the device is operating.
4. Do not look into the laser beam directly by bare eyes. The laser beam may cause severe damage to human eyes.
ROITHNER [ Roithner LaserTechnik GmbH ]
