RB520S-30
Diodes
Schottky barrier diode
RB520S-30
Applications
Low current rectification
External dimensions
(Unit : mm)
0.8±0.05
0.12±0.05
Land size figure
(Unit : mm)
0.8
1.2±0.05
1.6±0.1
Features
1) Ultra Small mold type. (EMD2)
2) Low I
R
.
3) High reliability.
0.6
EMD2
Structure
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
Taping specifications
(Unit : mm)
4.0±0.1
2.0±0.05
φ1.5±0.05
0.2±0.05
3.5± 0.05
1.75±0.1
8.0±0.15
1.3±0.06
0
φ0.5
0.95±0.06
0
空ポケット
Empty pocket
4.0±0.1
2.0±0.05
1.26±0.05
0
2.45±0.1
0.6
0.2
0.76±0.05
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak
（60Hz・1cyc）
Junction temperature
Storage temperature
Symbol
V
R
Io
I
FSM
Tj
Tstg
Limits
30
200
1
150
-40 to +125
Unit
V
mA
A
℃
℃
Electrical characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.6
1
Unit
V
µA
Conditions
I
F
=200mA
V
R
=10V
1.7
Rev.B
1/3
ROHM [ ROHM ]
