Data Sheet
Schottky barrier diode
RB520S-30
Applications
Low current rectification
Dimensions
(Unit : mm)
0.8±0.05
0.12±0.05
Land
size figure
(Unit : mm)
0.8
0.6
3) High reliability.
1.2±0.05
1.6±0.1
Features
1) Ultra Small mold type. (EMD2)
2) Low I
R
.
EMD2
Construction
Silicon epitaxial planar
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Structure
0.6±0.1
Taping
specifications
(Unit : mm)
0.2±0.05
4.0±0.1
2.0±0.05
φ1.5±0.05
φ1.55±0.05
3.5±0.05
1.75±0.1
8.0±0.15
2.40±0.05
2.45±0.1
1.25
0.06
1.3±0.06
0
0
1.25
0.06
1.26±0.05
0
0.6
0
0.2
0.76±0.05
0.75±0.05
φ0.5
0.95±0.06
0.90±0.05
0
空ポケット
Empty pocket
4.0±0.1
2.0±0.05
Absolute
maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz
・1cyc)
Junction temperature
Storage temperature
Symbol
V
R
Io
I
FSM
Tj
Tstg
Limits
30
200
1
125
-40 to +125
Unit
V
mA
A
°C
°C
Electrical
characteristics
(Ta=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.6
1
Unit
V
μA
Conditions
I
F
=200mA
V
R
=10V
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2011.03 - Rev.D
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