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R6020ENX
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
dv/dt
Conditions
-
Values Unit
Reverse diode dv/dt
15
V/ns
V
DS
= 480V, T = 25℃
Drain - Source voltage slope
dv/dt
50
V/ns
j
llThermal resistance
Values
Parameter
Symbol
Unit
Min.
Typ. Max.
RthJC
RthJA
Tsold
Thermal resistance, junction - case
-
-
-
-
-
-
1.8
70
℃/W
℃/W
℃
Thermal resistance, junction - ambient
Soldering temperature, wavesoldering for 10s
265
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
V(BR)DSS
Conditions
Unit
V
Min.
600
Typ. Max.
Drain - Source breakdown
voltage
V
V
= 0V, I = 1mA
D
-
-
GS
= 600V, V = 0V
ꢀ
ꢀ
0.1
-
ꢀ
100
1000
±100
4
DS
GS
Zero gate voltage
drain current
IDSS
T = 25°C
-
μA
j
T = 125°C
-
j
IGSS
Gate - Source leakage current
Gate threshold voltage
V
GS
V
DS
V
GS
= ±20V, V = 0V
-
-
nA
V
DS
VGS(th)
= 10V, I = 1mA
2
ꢀ
-
-
D
= 10V, I = 9.5A
ꢀ
ꢀ
D
Static drain - source
on - state resistance
*5
RDS(on) T = 25°C
0.170 0.196
Ω
Ω
j
T = 125°C
-
0.36
5.8
-
-
j
R
G
Gate resistance
f =1MHz, open drain
-
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20190603 - Rev.002
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