EMD3 / UMD3N / IMD3A
Transistors
General purpose
(dual digital transistors)
EMD3 / UMD3N / IMD3A
Features
1) Both the DTA114E chip and DTC114E chip in a EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
External dimensions
(Unit : mm)
EMD3
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D3
0.65
1.3
0.65
Structure
Epitaxial planar type
NPN / PNP silicon transistor (Built-in resistor type)
(4)
(3)
UMD3N
0.2
0.5
0.5 0.5
1.0
1.6
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
2.0
(6)
(5)
1.25
2.1
0.15
0.1Min.
0to0.1
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “−” sign on DTr
2
values for the PNP
type have been omitted.
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D3
IMD3A
(6)
Equivalent circuits
EMD3 / UMD3N
(3) (2) (1)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
DTr
2
R
2
R
1
(4) (5)
DTr
2
R
2
R
1
(3) (2)
0.3
(4)
(5)
IMD3A
0.15
1.6
2.8
(4) (5) (6)
R
1
R
2
DTr
1
R
1
=10kΩ
R
2
=10kΩ
(1)
0.3to0.6
0to0.1
Each lead has same dimensions
(6)
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D3
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Symbol
V
CC
V
IN
I
O
I
C (Max.)
Pd
Tj
Tstg
Limits
50
−10
40
Output current
EMD3, UMD3N
Power
dissipation IMD3A
Junction temperature
Storage temperature
50
100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
mA
mW
∗
1
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(2)
(1)
(1)
(2)
Rev.A
1/3
ROHM [ ROHM ]
