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DTC143TE FRA
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
50
50
V
5
V
Collector current
100
mA
mW
℃
*1
PD
Power dissipation
150
Tj
Junction temperature
Range of storage temperature
150
Tstg
-55 to +150
℃
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
-
Collector-base breakdown
voltage
BVCBO
BVCEO
I = 50μA
-
V
V
C
Collector-emitter breakdown
voltage
I = 1mA
50
-
-
C
BVEBO
ICBO
I = 50μA
Emitter-base breakdown voltage
Collector cut-off current
5
-
-
-
-
V
nA
nA
mV
-
E
V
CB
V
EB
= 50V
= 4V
500
500
150
600
5.9
IEBO
Emitter cut-off current
-
-
Collector-emitter saturation voltage
VCE(sat) I = 5mA, I = 0.25mA
-
-
C
B
hFE
R1
V
CE
= 5V, I = 1mA
DC current gain
Input resistance
100
3.5
250
4.7
C
-
kΩ
V
= 10V, I = -5mA,
E
CE
*2
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference land.
*2 Characteristics of built-in transistor
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20161024 - Rev.001
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