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BSS84T116 参数 Datasheet PDF下载

BSS84T116图片预览
型号: BSS84T116
PDF下载: 下载PDF文件 查看货源
内容描述: [Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET,]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 14 页 / 3082 K
品牌: ROHM [ ROHM ]
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BSS84
l
Thermal resistance
          
        
Datasheet
                                   
Parameter
Symbol
R
thJA*2
R
thJA*3
Values
Min.
-
-
Typ.
-
-
Max.
357
625
Unit
/W
/W
Thermal resistance, junction - ambient
l
Electrical characteristics (T
a
= 25°C)
Parameter
Drain - Source breakdown
voltage
Breakdown voltage
temperature coefficient
Zero gate voltage
drain current
Gate - Source leakage current
Gate threshold voltage
Gate threshold voltage
temperature coefficient
Static drain - source
on - state resistance
Forward Transfer
Admittance
Symbol
Conditions
Values
Min.
-60
-
-
-
-1.0
-
-
-
0.2
Typ.
-
-56.9
-
-
-
2.7
2.8
3.5
-
Max.
-
-
-1
±10
-2.5
-
5.3
6.4
-
Unit
V
(BR)DSS
V
GS
= 0V, I
D
= -1mA
Δ
 
V
(BR)DSS
I
D
= -1mA
 
 
 
ΔT
j
   
referenced to 25
V
mV/
μA
μA
V
mV/
Ω
I
DSS
I
GSS
V
GS(th)
V
DS
= -60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -100μA
 
Δ
V
GS(th)
 
I
D
= -100μA
 
 
ΔT
j
   
referenced to 25
R
DS(on)*4
|Y
fs
|
*4
V
GS
= -10V, I
D
= -0.23A
V
GS
= -4.5V, I
D
= -0.23A
V
DS
= -10V, I
D
= -0.23A
S
*1 Pw
10μs, Duty cycle
1%
*2 Mounted on a ceramic board (30mm x 30mm x 0.8 mm)
*3 Mounted on a FR4 board (20mm×12mm×0.8mm
Cu pad=0.8mm
2
)
*4 Pulsed
                                           
 
                                          
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