欢迎访问ic37.com |
会员登录 免费注册
发布采购

BC858B 参数 Datasheet PDF下载

BC858B图片预览
型号: BC858B
PDF下载: 下载PDF文件 查看货源
内容描述: PNP通用晶体管 [PNP General Purpose Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 5 页 / 138 K
品牌: ROHM [ ROHM ]
 浏览型号BC858B的Datasheet PDF文件第2页浏览型号BC858B的Datasheet PDF文件第3页浏览型号BC858B的Datasheet PDF文件第4页浏览型号BC858B的Datasheet PDF文件第5页  
BC858BW / BC858B
Transistors
PNP General Purpose Transistor
BC858BW / BC858B
Features
1) BV
CEO
<
-30V (I
C
=-1mA)
2) Complements the BC848B / BC848BW.
External dimensions
(Unit : mm)
BC858BW
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.2
±
0.1
Package, marking and packaging specifications
Paet No.
Pakaging type
Marking
Code
Basic ordering unit (pieces)
BC858BW
UMT3
G3K
T106
3000
BC858B
SST3
G3K
T116
3000
BC858B
2.9±0.2
1.9±0.2
2.1
±
0.1
00.1
(3)
ROHM : UMT3
EIAJ : EC-70
0.3+0.1
-
0
0.15±0.05
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
0.95 +0.2
−0.1
0.45±0.1
Absolute maximum ratings
(Ta=25°C)
(1)
0.95 0.95
(2)
1.3+0.2
- 0.1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
−30
−30
−5
−0.1
0.2
0.35
150
−65
to +150
Unit
V
V
V
A
W
(3)
2.4
±
0.2
0
~
0.1
0.2Min.
0.4 +0.1
−0.05
+0.1
0.15
−0.06
0.1~0.4
ROHM : SST3
All terminals have same dimensions
(1) Emitter
(2) Base
(3) Collector
˚C
˚C
When mounted on 7
×
5
×
0.6 mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(on)
h
FE
f
T
Cob
Min.
−30
−30
−5
−0.6
210
Typ.
250
4.5
Max.
−100
4
−0.3
−0.65
−0.75
480
Unit
V
V
V
nA
µA
V
V
V
MHz
pF
I
C
= −50µA
I
C
= −1mA
I
E
= −50µA
V
CB
= −30V
V
CB
= −30V,
Ta=150
°C
I
C
/I
B
= −10mA/−0.5mA
I
C
/I
B
= −100mA/−5mA
V
CE
/I
C
= −5V/−10mA
V
CE
/I
C
= −5V/−2mA
V
CE
= −5V
, I
E
=20mA
, f=100MHz
V
CB
= −10V
, I
E
=0
, f=1MHz
Conditions
Electrical characteristics curves
100
COLLECTOR CURRENT : I
C
(mA)
0.7
Ta=25˚C
10.0
COLLECTOR CURRENT : I
C
(mA)
0.6
0.5
8.0
50
Ta=25˚C
80
0.4
45
40
60
0.3
35
6.0
30
25
40
0.2
4.0
20
20
0.1
2.0
15
10
5
0
2.0
0
1.0
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
I
B
=0mA
1
B
=0µA
0
2.0
0
1.0
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics ( I )
Fig.2 Grounded emitter output
characteristics ( II )
Rev.A
1/4