BC848BW / BC848B
Transistors
NPN General Purpose Transistor
BC848BW / BC848B
Features
1) BV
CEO
minimum is 30V (I
C
=1mA)
2) Complements the BC858B / BC858BW.
External dimensions
(Unit : mm)
BC848BW
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0~0.1
(3)
ROHM : UMT3
EIAJ : SC-70
+0.1
0.3
−0
0.15±0.05
All terminals have same dimensions
0.1~0.4
(1) Emitter
(2) Base
(3) Collector
BC848B, BC848C
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
0.95
+0.2
−0.1
0.45±0.1
2.4
±
0.2
1.3
+0.2
−0.1
0~0.1
0.2Min.
(3)
+0.1
0.4
−0.05
+0.1
0.15
−0.06
All terminals have same dimensions
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power BC848BW
dissipation
BC848B
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
30
30
5
0.1
0.2
0.2
0.35
150
−65~+150
Unit
V
V
V
A
W
W
W
∗
°C
°C
∗
When mounted on a 7×5×0.6mm ceramic board.
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Collector output capacitance
Collector output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
V
CE(sat)
V
BE(on)
h
FE
f
T
Cob
Cib
Min.
30
30
5
−
−
−
−
0.58
200
−
−
−
Typ. Max. Unit
Conditions
V
I
C
=50µA
−
−
V
I
C
=1mA
−
−
V
I
E
=50µA
−
−
nA V
CB
=30V
100
−
µA
V
CB
=30V,
Ta=150°C
5
−
0.25
I
C
/I
B
=10mA/0.5mA
−
V
0.6
I
C
/I
B
=100mA/5mA
−
0.77
V
V
CE
/I
C
=5V/10mA
−
−
450
V
CE
/I
C
=5V/2mA
−
MHz V
CE
=5V,
I
E
=−20mA,
f=100MHz
200
−
pF V
CB
=10V,
I
E
=0,
f=1MHz
3
−
pF V
EB
=0.5V,
I
E
=0,
f=1MHz
8
−
(SPEC-C22)
Rev.A
1/5
ROHM [ ROHM ]
