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IRFS640B
200V N-Channel B-FET / Substitute of IRFS640 & IRFS640A
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Contents
•General description
•Features
•Qualification Support
Product Change Notices
(PCNs)
Datasheet
•Product status/pricing/packaging
•Order Samples
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datasheet
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General description
These N-Channel enhancement mode power field effect transistors are
produced using Fairchild’s proprietary, planar, DMOS technology.
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This advanced technology has been especially tailored to minimize on-state
resistance, provide superior switching performance, and withstand high
energy pulse in the avalanche and commutation mode. These devices are
well suited for high efficiency switching DC/DC converters, switch mode
power supplies, DC-AC converters for uninterrupted power supply and
motor control.
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Features
z
18A, 200V, R
= 0.18Ω @V = 10V
DS(on) GS
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z
z
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Low gate charge (typical 45 nC)
Low Crss (typical 45 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
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Product status/pricing/packaging
ROCHESTER [ Rochester Electronics ]
