ADG408/ADG409
B Version
−40ºC to
T Version
−55ºC to
Parameter
+25ºC
+85ºC
+25ºC
+125ºC
Unit
Test Conditions/Comments
POWER REQUIREMENTS
IDD
1
5
1
5
1
5
1
5
μA typ
μA max
μA typ
μA max
μA typ
μA max
VIN = 0 V, VEN = 0 V
ISS
IDD
100
200
100
200
VIN = 0 V, VEN = 2.4 V
500
500
1 Guaranteed by design, not subject to production test.
SINGLE SUPPLY
VDD = 12 V, VSS = 0 V, GND = 0 V, unless otherwise noted.
Table 2.
B Version
−40ºC to
T Version
−55ºC to
Parameter
+25ºC +85ºC
+25°C
+125ºC
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
RON
0 to VDD
0 to VDD
V
90
90
0.5
Ω typ
VD = 3 V, 10 V, IS = –1 mA
LEAKAGE CURRENTS
Source Off Leakage IS (OFF)
Drain Off Leakage ID (OFF)
ADG408
0.5
50
50
nA max
VD = 8 V/0 V, VS = 0 V/8 V; see Figure 19
VD = 8 V/0 V, VS = 0 V/8 V; see Figure 20
1
1
100
50
1
1
100
50
nA max
nA max
ADG409
Channel On Leakage ID, IS (ON)
ADG408
ADG409
VS = VD = 8 V/0 V; see Figure 21
1
1
100
50
1
1
100
50
nA max
nA max
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
2.4
0.8
2.4
0.8
V min
V max
IINL or IINH
10
10
μA max
pF typ
VIN = 0 or VDD
f = 1 MHz
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS1
tTRANSITION
8
8
130
10
130
10
ns typ
ns typ
RL = 300 Ω, CL = 35 pF;
VS1 = 8 V/0 V, VS8 = 0 V/8 V; see Figure 22
RL = 300 Ω, CL = 35 pF;
tOPEN
VS = 5 V; see Figure 23
tON (EN)
tOFF (EN)
140
60
140
60
ns typ
ns typ
RL = 300 Ω CL = 35 pF;
VS = 5 V; see Figure 24
RL = 300 Ω, CL = 35 pF;
VS = 5 V; see Figure 24
Charge Injection
Off Isolation
5
–75
5
–75
pC typ
dB typ
VS = 0 V, RS = 0Ω, CL = 10 nF; see Figure 25
RL = 1 kΩ f = 100 kHz;
VEN = 0 V; see Figure 26
Rev. C | Page 4 of 16
ROCHESTER [ Rochester Electronics ]
