AD8601/AD8602/AD8604
VS = 5.0 V, VCM = VS/2, TA = 25°C, unless otherwise noted.
Table 2.
A Grade
Typ
D Grade
Typ
Parameter
Symbol
VOS
Conditions
Min
Max
Min
Max
Unit
INPUT CHARACTERISTICS
Offset Voltage (AD8601/AD8602)
0 V ≤ VCM ≤ 5 V
−40°C ≤ TA ≤ +125°C
VCM = 0 V to 5 V
80
80
0.2
500
1300
600
1700
60
100
1000
30
1300
1300
0.2
6000
7000
6000
7000
200
200
1000
100
100
500
5
μV
μV
μV
μV
pA
pA
pA
pA
pA
pA
V
Offset Voltage (AD8604)
Input Bias Current
VOS
−40°C ≤ TA ≤ +125°C
IB
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
Input Offset Current
IOS
0.1
6
25
0.1
6
25
−40°C ≤ TA ≤ +85°C
−40°C ≤ TA ≤ +125°C
50
500
5
Input Voltage Range
0
0
Common-Mode Rejection Ratio
Large Signal Voltage Gain
CMRR
AVO
VCM = 0 V to 5 V
VO = 0.5 V to 4.5 V,
RL = 2 kΩ, VCM = 0 V
74
30
89
80
56
20
67
60
dB
V/mV
Offset Voltage Drift
OUTPUT CHARACTERISTICS
Output Voltage High
ΔVOS/ΔT
VOH
2
2
μV/°C
IL = 1.0 mA
4.925 4.975
4.925 4.975
V
IL = 10 mA
−40°C ≤ TA ≤ +125°C
IL = 1.0 mA
IL = 10 mA
−40°C ≤ TA ≤ +125°C
4.7
4.6
4.77
4.7
4.6
4.77
V
V
Output Voltage Low
VOL
15
125
30
175
250
15
125
30
175
250
mV
mV
mV
mA
Ω
Output Current
IOUT
50
10
50
10
Closed-Loop Output Impedance
POWER SUPPLY
ZOUT
f = 1 MHz, AV = 1
Power Supply Rejection Ratio
Supply Current/Amplifier
PSRR
ISY
VS = 2.7 V to 5.5 V
VO = 0 V
−40°C ≤ TA ≤ +125°C
67
80
750
56
72
750
dB
μA
μA
1200
1500
1200
1500
DYNAMIC PERFORMANCE
Slew Rate
Settling Time
Full Power Bandwidth
Gain Bandwidth Product
Phase Margin
SR
tS
BWp
GBP
Φo
RL = 2 kΩ
To 0.01%
<1% distortion
6
6
V/μs
μs
kHz
MHz
Degrees
<1.0
360
8.4
55
<1.0
360
8.4
55
NOISE PERFORMANCE
Voltage Noise Density
en
in
f = 1 kHz
f = 10 kHz
f = 1 kHz
33
18
0.05
33
18
0.05
nV/√Hz
nV/√Hz
pA/√Hz
Current Noise Density
Rev. G | Page 4 of 24
ROCHESTER [ Rochester Electronics ]
