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RN5VM111C-TR 参数 Datasheet PDF下载

RN5VM111C-TR图片预览
型号: RN5VM111C-TR
PDF下载: 下载PDF文件 查看货源
内容描述: 的锂离子电池保护 [Li-lon BATTERY PROTECTOR]
分类和应用: 电池
文件页数/大小: 25 页 / 179 K
品牌: RICOH [ RICOH ELECTRONICS DEVICES DIVISION ]
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RN5VM1××C/D  
OPERATION  
• VD1/Over-Charge Detector  
· The VD1 monitors VDD pin voltage. When the VDD voltage crosses over-charge detector threshold VDET1 from a low val-  
ue to a value higher than the VDET1, the VD1 can sense over-charging and an external charge control Nch-MOS-FET  
turns to “OFF” with COUT pin being at “L”.  
· An output delay time for over-charge detection can be set by an external capacitor C3 connecting the Vss pin and Ct pin.  
The external capacitor can make a delay time from a moment detecting over-charge to a time output a signal which  
enables charge control Nch-MOS-FET for turning to “OFF”. Though the VDD voltage would be going up to a higher lev-  
el than VDET1 if it is within a time period of the output delay time, VD1 would not output a signal for turning “OFF” of  
charg control Nch-MOS-FET. The output delay time can be calculated as below:  
(
)
C3 × VDD– 0.7  
tVDET1 =  
0.48 × 10–6  
· A level shifter incorporated in a buffer driver for the COUT pin makes the “L” of COUT pin to the V- pin voltage and the “H”  
of COUT pin is set to VDD voltage with CMOS buffer.  
Reset conditions from overcharging of RN5VM1××C  
· There can be two cases to reset the VD1 making the COUT pin level to “H” again after detecting over-charge. Resetting  
the VD1 makes the charging system ready for resumption of charging process.  
The first case is in such condition that a time when the VDD voltage is coming down to a level lower than “VDET1–VHYS1”.  
While in the second case, disconnecting a charger from the battery pack can make the VD1 resetting when the VDD lev-  
<
el is within hysteresis width (VDET1–VHYS1VDD VDET1)  
· After detecting over-charge with the VDD voltage of higher than VDET1, connecting system load to the battery pack makes  
load current allowable through parasitic diode of external charge control Nch-MOS-FET. The COUT level would be “H”  
when the VDD level is coming down to a level below the VDET1 by continuous drawing of load current.  
Reset conditions from overcharging of RN5VM1××D  
· After detecting over-charge, the VD1 would not be released and COUT level would not switch to “H” again with the excep-  
tion that a cell voltage reaches to a lower value than “VDET1–VHYS1” by self discharge of cell or else. After detecting over-  
charge, when the VDD level stays at a value higher than “VDET1–VHYS1”, to connect battery pack to a system load makes  
battery pack being disabled at for charging or discharging because of excess current detector operated being DOUT “L”.  
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