RT8008
Parameter
FB Input Current
PMOSFET R
ON
Symbol
I
FB
V
FB
= V
IN
V
IN
= 3.6V
V
IN
= 2.5V
V
IN
= 3.6V
V
IN
= 2.5V
Test Conditions
Min
−50
--
--
--
--
1
1.5
--
--
--
f
OSC
T
SD
V
IN
= 3.6V, I
OUT
= 100mA
1.2
--
--
100
V
IN
= 3.6V, V
LX
= 0V or V
LX
= 3.6V
−1
Typ
--
0.3
0.4
0.25
0.35
--
--
--
1.8
0.1
1.5
160
50
--
--
Max
50
--
--
--
--
1.8
--
0.4
--
--
1.8
--
--
--
1
Units
nA
Ω
Ω
A
V
V
V
V
MHz
°C
ns
%
µA
P
RDS(ON)
I
OUT
= 200mA
NMOSFET R
ON
P-Channel Current Limit
EN High-Level Input Voltage
EN Low-Level Input Voltage
Undervoltage Lock Out threshold
Hysteresis
Oscillator Frequency
Thermal Shutdown Temperature
Min. On Time
Max. Duty Cycle
LX Leakage Current
N
RDS(ON)
I
OUT
= 200mA
I
P(LM)
V
ENH
V
ENL
V
IN
= 2.5V to 5.5 V
V
IN
= 2.5V to 5.5V
V
IN
= 2.5V to 5.5V
Note 1.
Stresses listed as the above
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are for
stress ratings. Functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended
periods may remain possibility to affect device reliability.
Note 2.
Devices are ESD sensitive. Handling precaution recommended.
Note 3.
The device is not guaranteed to function outside its operating conditions.
Note 4.
θ
JA
is measured in the natural convection at T
A
= 25°C on a low effective single layer thermal conductivity test board of
JEDEC 51-3 thermal measurement standard. Pin 2 of SOT-23-5/TSOT-23-5 packages is the case position for
θ
JC
measurement.
DS8008-04 March 2007
www.richtek.com
5
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
