RT6575A/B
Parameter
Power MOSFET Drivers
High State, V
BOOTx
V
UGATEx
= 0.25V,
V
BOOTx
V
PHASEx
= 5V
Low State, V
UGATEx
V
PAHSEx
=
0.25V, V
BOOTx
V
PHASEx
= 5V
High State, V
LDO5
V
LGATEx
= 0.25V,
V
LDO5
= 5V
Low State, V
LGATEx
GND = 0.25V
Dead-Time
t
D
LGATEx Rising
UGATEx Rising
--
--
--
--
--
--
3
2
3
1
20
30
--
--
--
--
--
--
ns
Symbol
Test Conditions
Min
Typ
Max
Unit
UGATEx On-Resistance
R
UGATEx
LGATEx On-Resistance
R
LGATEx
Note 1.
Stresses beyond those listed
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright
©
2016 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS6575A/B-03 February 2016
www.richtek.com
9
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
