RT6233A/B
Parameter
Internal MOSFET
High-Side On-Resistance
Low-Side On-Resistance
Current Limit
High-Side Switch Current Limit I
LIM_H
Low-Side Switch Valley Current
I
LIM_L
Limit
Switching Frequency
Switching Frequency
On-Time Timer Control
Maximum Duty Cycle
Minimum On-Time
Minimum Off-Time
Power Good
PGOOD Threshold
FB rising
FB falling
--
--
90
85
--
--
%
D
MAX
t
ON(MIN)
t
OFF(MIN)
--
--
--
86
60
240
--
--
--
%
ns
f
SW
400
500
--
kHz
--
3.1
5.8
3.8
--
--
A
R
DS(ON)_H
R
DS(ON)_L
V
BOOT
− V
LX
= 4.8V
--
--
195
105
--
--
mΩ
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Under Voltage and Over Voltage Protections
OVP Trip Threshold
OVP Propagation Delay
UVP Trip Threshold
UVP Propagation Delay
Thermal Shutdown
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
T
SD
T
SD
--
--
150
20
--
--
°C
UVP detect
Hysteresis
OVP detect
--
--
45
--
--
125
10
50
10
5
--
--
55
--
--
%
µs
%
µs
Note 1.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Note 2.
JA
is measured at T
A
= 25C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright © 2018 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
6
DS6233A/B-02
December
2018