RT6232A/B
Parameter
Internal MOSFET
High-Side On-Resistance
Low-Side On-Resistance
Current Limit
High-Side Switch Current Limit
Low-Side Switch Valley
Current Limit
Switching Frequency
Switching Frequency
On-Time Timer Control
Maximum Duty Cycle
Minimum On Time
Minimum Off Time
Power Good
PGOOD Threshold
V
PGOOD
FB rising
FB falling
--
--
90
85
--
--
%
D
MAX
t
ON(MIN)
t
OFF(MIN)
--
--
--
86
60
240
--
--
--
%
ns
f
SW
400
500
--
kHz
I
LIM_H
I
LIM_L
--
2.6
5.8
3.3
--
A
--
R
DS(ON)_H
R
DS(ON)_L
V
BOOT
− V
LX
= 4.8V
--
--
210
120
--
--
mΩ
Symbol
Test Conditions
Min
Typ
Max
Unit
Output Under Voltage And Over Voltage Protections
OVP Trip Threshold
OVP Propagation Delay
UVP Trip Threshold
UVP Propagation Delay
Thermal Shutdown
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
T
SD
T
SD
--
--
150
20
--
--
°C
UVP detect
Hysteresis
OVP detect
--
--
45
--
--
125
10
50
10
5
--
--
55
--
--
%
µs
%
µs
Note 1.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the
operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device
reliability.
Note 2.
JA
is measured at T
A
= 25C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright © 2018 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation
www.richtek.com
6
DS6232A/B-02
December
2018
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
