RT5035A/B
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
VDDM Discharge Equivalent
Resistance
VM = 4.2V and VDDM = 1V
200
--
--
Each Channel Discharge Finish
Threshold for Next Channel
Starting to Turn Off
0.05
0.1
0.15
V
CH1 Async. PFM
N-MOSFET On-Time
Minimum Off-Time
--
--
0.5
0.5
0.8
3.6
--
--
s
s
A
N-MOSFET Current Limit
VOUT1 Regulation Voltage
--
--
3.5
3.7
V
Note 1. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect
device reliability.
Note 2. JA is measured at TA = 25C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. JC is
measured at the exposed pad of the package.
Note 3. Devices are ESD sensitive. Handling precaution is recommended.
Note 4. The device is not guaranteed to function outside its operating conditions.
Copyright © 2020 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
14
DS5035A/B-03 February 2020
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
