RT5016C
Parameter
Symbol
Test Conditions
VO2LX2B,
P-MOSFET, VO2 = 3.3V
Min
Typ
Max
Unit
--
200
300
m
On-Resistance of MOSFET
RDS(ON)_2B
LX2B GND,
--
150
250
m
N-MOSFET VO2 = 3.3V
Both P-MOSFET (PVD2 LX2A)
and N-MOSFET (LX2B GND)
Current Limit
ILIM_2
2
2.5
6
3
A
V
Over-Voltage Protection at VO2
5.82
6.18
Target voltage is the chosen one
in A4.FB2 [2:0]
Under-Voltage Protection at FB2
--
0.4
--
V
Target
0.1
20
Over-Load Protection at FB2
Off Discharge Current at VO2
--
--
--
--
--
--
V
mA
V
VO2 = 3.3V, SYS = 3.3V
A5.FB3 [2:0] = 3’b100
Discharge Finishing Threshold at
VO2
0.1
CH3 LV Sync Step-Down
Feedback Regulation Voltage at
FB3
0.788
0.8
0.812
V
Minimum On-Time for PSM
Maximum Duty Cycle
Soft-Start Time
--
--
50
--
--
100
--
ns
%
FB3 = 0.75V
FB3 = 0 to 0.8V
--
4
ms
m
m
A
RDS(ON)_P
RDS(ON)_N
ILIM_3
P-MOSFET, PVD3 = 3.3V
N-MOSFET, PVD3 = 3.3V
--
200
150
3.5
0.4
300
250
4
On-Resistance of MOSFET
--
Current Limitation
3
Under-Voltage Protection at FB3
0.35
0.45
V
Target voltage is the chosen one
in A5.FB3 [2:0]
Target
0.1
Over-Load Protection at FB3
Off Discharge Current at LX3
--
--
--
--
--
--
V
mA
V
LX3 = 1V, SYS = 3.3V
20
Discharge Finishing Threshold at
FB3
0.1
CH4 LV Sync Step-Down
Feedback Regulation Voltage at
FB4
A5.FB4 [2:0] = 3’b100
0.788
0.8
0.812
V
Minimum On-Time for PSM
Maximum Duty Cycle
Soft-Start Time
--
--
50
--
--
100
--
ns
%
FB4 = 0.75V
FB4 = 0 to 0.8V
--
4
ms
m
m
A
RDS(ON)_P
RDS(ON)_N
ILIM_4
P-MOSFET, PVD4 = 3.3V
N-MOSFET, PVD4 = 3.3V
--
300
200
2.5
0.4
400
300
3
On-Resistance of MOSFET
--
Current Limit
2
Under-Voltage Protection at FB4
0.35
0.45
V
Target voltage is the chosen one
in A5.FB4 [2:0]
Target
0.1
Over-Load Protection at FB4
Off Discharge Current at LX4
--
--
--
--
--
--
V
mA
V
LX4 = 1V, SYS = 3.3V
20
Discharge Finishing Threshold at
FB4
0.1
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10
DS5016C-02 November 2016
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
