RT2701
Parameter
Symbol
Test Conditions
Measured at VSENS with Respect
to Unloaded Output Voltage (UOV)
Min
--
7.2
Low Level (SD) (Hysteresis)
ASM Mode
DEM Mode
EN = 0V
I
PS
--
1.2
4.5
−1
--
--
V
UGATEx
−
V
PHASEx
= 0.1V,
I
UGATEx
= 50mA
V
LGATEx
= 0.1V, I
LGATEx
= 50mA
PVCC to BOOTx
Typ
50%
8
--
--
--
--
8
500
Max
--
8.8
0.5
3
--
5
--
--
Unit
%
μA
V
V
μA
μA
ns
Under Voltage Protection Threshold V
UV
Current Source by OCP Pin
Logic Inputs
EN Threshold Voltage
EN Pin Mode Select Voltage
Leakage Current of EN
Auto Phase Control
Current Source by PSI Pin
Maximum Duty Cycle
UGATE Min. Off Time
Gate Driver
Upper Driver Sink
Lower Driver Sink
Internal Boost Charging Switch
On-Resistance
R
UGATEsk
R
LGATEsk
R
BOOT
1
0.7
--
2
1.4
20
3.5
2.5
--
Ω
Ω
Ω
V
IL
I
OCP
Note 1.
Stresses beyond those listed
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright
©
2013 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
DS2701-00 May 2013
www.richtek.com
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