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LMK316BJ476MM 参数 Datasheet PDF下载

LMK316BJ476MM图片预览
型号: LMK316BJ476MM
PDF下载: 下载PDF文件 查看货源
内容描述: 5A , 24V , 570kHz降压转换器 [5A, 24V, 570kHz Step-Down Converter]
分类和应用: 转换器
文件页数/大小: 16 页 / 482 K
品牌: RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
 浏览型号LMK316BJ476MM的Datasheet PDF文件第7页浏览型号LMK316BJ476MM的Datasheet PDF文件第8页浏览型号LMK316BJ476MM的Datasheet PDF文件第9页浏览型号LMK316BJ476MM的Datasheet PDF文件第10页浏览型号LMK316BJ476MM的Datasheet PDF文件第12页浏览型号LMK316BJ476MM的Datasheet PDF文件第13页浏览型号LMK316BJ476MM的Datasheet PDF文件第14页浏览型号LMK316BJ476MM的Datasheet PDF文件第15页  
RT8251  
to return VOUT to its steady-state value. During this  
recovery time, VOUT can be monitored for overshoot or  
ringing that would indicate a stability problem.  
snubber between SW and GND and make them as close  
as possible to the SW pin (see Figure 5). Another method  
is to add a resistor in series with the bootstrap capacitor,  
CBOOT. But this method will decrease the driving capability  
to the high-side MOSFET. It is strongly recommended to  
reserve the R-C snubber during PCB layout for EMI  
improvement. Moreover, reducing the SW trace area and  
keeping the main power in a small loop will be helpful on  
EMI performance. For detailed PCB layout guide, please  
refer to the section of Layout Consideration.  
EMI Consideration  
Since parasitic inductance and capacitance effects in PCB  
circuitry would cause a spike voltage on the SW pin when  
high-side MOSFET is turned-on/off, this spike voltage on  
SW may impact on EMI performance in the system. In  
order to enhance EMI performance, there are two methods  
to suppress the spike voltage. One is to place an R-C  
R
*
BOOT  
1
3
2
V
IN  
BOOT  
RT8251  
VIN  
4.75V to 24V  
C
IN  
10µF x 2  
C
BOOT  
L
4.7µH  
100nF  
R
*
EN  
V
OUT  
SW  
Chip Enable  
3.3V/5A  
7
EN  
D
R *  
S
B540C  
C
*
EN  
R1  
30.9k  
C
OUT  
22µF x 2  
C *  
S
8
SS  
5
6
FB  
C
SS  
10nF  
4,  
C
C
R
C
R2  
10k  
2.2nF  
Exposed Pad(9)  
22k  
GND  
COMP  
C
P
* : Optional  
NC  
Figure 5. Reference Circuit with Snubber and Enable Timing Control  
Thermal Considerations  
For continuous operation, do not exceed the maximum  
operation junction temperature 125°C. The maximum  
power dissipation depends on the thermal resistance of  
IC package, PCB layout, the rate of surroundings airflow  
and temperature difference between junction to ambient.  
The maximum power dissipation can be calculated by  
following formula :  
PD(MAX) = (125°C 25°C) / (75°C/W) = 1.333W for  
PSOP-8  
PD(MAX) = (125°C 25°C) / (68°C/W) = 1.471W for  
WQFN  
(min.copper area PCB layout)  
PD(MAX) = (125°C 25°C) / (49°C/W) = 2.04W for  
PSOP-8 (70mm2copper area PCB layout)  
PD(MAX) = (TJ(MAX) TA ) / θJA  
The thermal resistance θJA of SOP-8 (Exposed Pad) is  
determined by the package architecture design and the  
PCB layout design. However, the package architecture  
design had been designed. If possible, it's useful to  
increase thermal performance by the PCB layout copper  
design. The thermal resistance θJA can be decreased by  
adding copper area under the exposed pad of SOP-8  
(Exposed Pad) package.  
Where TJ(MAX) is the maximum operation junction  
temperature , TA is the ambient temperature and the θJA is  
the junction to ambient thermal resistance.  
For recommended operating conditions specification of  
RT8251, the maximum junction temperature is 125°C. The  
junction to ambient thermal resistance θJA is layout  
dependent. For PSOP-8 and WQFNpackages, the thermal  
resistance θJA are 75°C/W and 68°C/W on the standard  
JEDEC 51-7 four-layers thermal test board. The maximum  
power dissipation at TA = 25°C can be calculated by  
following formula :  
As shown in Figure 6, the amount of copper area to which  
the SOP-8 (Exposed Pad) is mounted affects thermal  
performance. When mounted to the standard  
Copyright 2013 Richtek Technology Corporation. All rights reserved.  
©
is a registered trademark of Richtek Technology Corporation.  
DS8251-04 February 2013  
www.richtek.com  
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