RT8073
Parameter
MOSFET
High Side MOSFET On-resistance
Low Side MOSFET On-resistance
Current Limit
Current Limit Threshold
Power Good
V
FB
Rising (Good)
Power Good Range
(WDFN-12L 3x3 only)
V
FB
Falling (Fault)
V
FB
Rising (Fault)
V
FB
Falling (Good)
Over Temperature Protection
Thermal Shutdown
Thermal Shutdown Hysteresis
Rising
--
--
165
20
--
--
°C
°C
--
--
--
--
94
90
110
106
--
--
--
--
% V
REF
7
9
--
A
V
IN
= 5V, BOOT
−
LX = 5V
V
IN
= 5V
--
--
50
35
--
--
mΩ
mΩ
Symbol
Test Conditions
Min
Typ
Max
Unit
Note 1.
Stresses beyond those listed
“Absolute
Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in
the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may
affect device reliability.
Note 2.
θ
JA
is measured at T
A
= 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7.
θ
JC
is
measured at the exposed pad of the package.
Note 3.
Devices are ESD sensitive. Handling precaution is recommended.
Note 4.
The device is not guaranteed to function outside its operating conditions.
Copyright
©
2012 Richtek Technology Corporation. All rights reserved.
is a registered trademark of Richtek Technology Corporation.
www.richtek.com
6
DS8073-01
November 2012
RICHTEK [ RICHTEK TECHNOLOGY CORPORATION ]
