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RFPA3800 参数 Datasheet PDF下载

RFPA3800图片预览
型号: RFPA3800
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓HBT 150MHz的TO 960MHz的功率放大器 [GaAs HBT 150MHz TO 960MHz POWER AMPLIFIER]
分类和应用: 放大器功率放大器
文件页数/大小: 12 页 / 2163 K
品牌: RFMD [ RF MICRO DEVICES ]
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RFPA3800  
Absolute Maximum Ratings  
Parameter  
Caution! ESD sensitive device.  
Rating  
7.5  
Unit  
V
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Supply Voltage (V and V  
) >300MHz  
CC  
BIAS  
Supply Voltage (V and V  
) <300MHz  
5.5  
V
CC  
BIAS  
Reference Current (I  
)
10  
mA  
mA  
REF  
RoHS status based on EUDirective2002/95/EC (at time of this document revision).  
DC Supply Current (I )  
2300  
C
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
CW Input Power, 2:1 Output VSWR  
CW Input Power, 5:1 Output VSWR  
Output Load VSWR at P3db  
28  
20  
dBm  
dBm  
5:1  
Operating Junction Temperature  
160  
°C  
°C  
Operating Temperature Range (T )  
L
-40 to +85  
Storage Temperature  
-55 to +150  
Class 1B  
MSL 2  
°C  
ESD Rating: Human Body Model  
Moisture Sensitvity Level  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
V
=7.0V, V  
=7.0V, I =650mA  
BIAS CQ  
460MHz  
CC  
Frequency  
450  
460  
470  
23  
MHz  
dBm  
EVB tuned for linear operation  
<7.5V, load VSWR<2:1  
Input Power (P  
)
V
CC  
IN  
Gain (S21)  
OIP3  
18  
48  
dB  
dBm  
dBm  
%
20dBm/tone, tone spacing=1MHz  
EVB tuned for linear operation  
P1dB  
36.7  
50  
Efficiency at P3dB  
At P3dB, EVB tuned for linear operation  
Input Return Loss (S11)  
Output Return Loss (S22)  
Noise Figure  
15  
dB  
9
dB  
5
dB  
WCDMA Ch Power at -65dBc ACPR  
WCDMA Ch Power at -55dBc ACPR  
945MHz  
19.5  
24.5  
dBm  
dBm  
3GPP 3.5, Test Model 1, 64 DPCH  
3GPP 3.5, Test Model 1, 64 DPCH  
V
=7.0V, V  
=7.0V, I =650mA  
BIAS CQ  
CC  
Frequency  
920  
12  
940  
960  
26  
MHz  
dBm  
EVB tuned for linear operation  
<7.5V, load VSWR<2:1  
Input Power (P  
)
V
CC  
IN  
Gain (S21)  
OIP3  
13.5  
48  
15.0  
dB  
dBm  
dBm  
%
945MHz  
20dBm/tone, tone spacing=1MHz  
EVB tuned for linear operation  
At P3dB, EVB tuned for linear operation  
P1dB  
36  
Efficiency at P3dB  
45  
Input Return Loss (S11)  
Output Return Loss (S22)  
Noise Figure  
13  
dB  
10  
dB  
4
dB  
WCDMA Ch Power at -65dBc ACPR  
WCDMA Ch Power at -55dBc ACPR  
Power Supply  
19.5  
24.5  
dBm  
dBm  
3GPP 3.5, Test Model 1, 64 DPCH  
3GPP 3.5, Test Model 1, 64 DPCH  
Operating Current (Quiescent)  
500  
650  
7.0  
700  
7.5  
mA  
V
At V =7.0V  
CC  
Operating Voltage (V  
)
Max recommended collector voltage  
At quiescent current, no RF  
CC  
Thermal Resistance (R  
)
11.5  
C/W  
A  
TH  
Power Down Current  
20  
At V =0V.  
REF  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
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