RF2850
Absolute Maximum Ratings
Parameter
Caution! ESD sensitive device.
Rating
Unit
Supply Voltage
LO Input
Operating Temperature
Storage Temperature
-0.5 to +5.3
V
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
+10
-40 to +85
-65 to +150
°C
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
High Band Performance (1900MHz) with CW Bas eband Inputs
LO Input Port
LO Drive Level
-5
50
13
dBm
Ω
dB
LO Input Impedance
LO Port Return Loss
Modulation Input
Frequency Range
Reference Voltage
Baseband Input Level
DC
250
MHz
V
2.05
0.25
Baseband common mode voltage
V
0.25V
per pin, 500mV V
differential,
P-P
P-P
P-P
I/Q in quadrature
CW baseband signal
Measured at DC
I/Q Signal
Input Impedance
Bandwidth (-1dB)
200
40
130
kHz
kΩ
MHz
500mV V
differential, I/Q at 2.05V DC
P-P
Input Bias Current
40
μA
I/Q Modulator Output
RF Frequency Range
1700
2500
MHz
T=25°C, V =5V
CC
RF Output Power
RF Output Return Loss
RF Output P1dB
Carrier Suppression
Carrier Suppression
Sideband Suppression
IM3 Suppression
-6
15
5
25
55
45
52
dBm
dB
4
dBm
dBc
dBc
dBc
dBc
20
35
30
Unadjusted (see note)
Adjusted. T=-40°C to +85°C
Unadjusted
Two tone baseband input @ 500mV
ferential per tone
dif-
P-P
Output IP3
15
20
dBm
Broadband Noise Floor
-158
-156
5.25
dBm/Hz
20MHz offset from LO, all IQ input at bias of
2.05V
DC Parameters
Supply Voltage
5.0
60
V
V
mA
Specification
Operating limits
4.75
Supply Current
Note: 20dBc limit for unadjusted carrier suppression is applicable for differential I and Q inputs only.
5-52
Rev A0 050616
RFMD [ RF MICRO DEVICES ]
