RF2705
Absolute Maximum Ratings
Parameter
Rating
Unit
V
°C
°C
V
dBm
Caution! ESD sensitive device.
Supply Voltage
-0.5 to 3.6
-40 to +150
-40 to +85
-0.5 to +3.6
+5
Storage Temperature
Operating Ambient Temperature
Input Voltage, any pin
Input Power, any pin
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Output Performance with Modulated Baseband Inputs
Low Band EDGE 8PSK Mode (GSM850/GSM900)
Mode=Low Band F x1 (see Control Logic Truth Table for Mode Control Settings)
LO
V
=2.7V, T=+25°C
Output Power
CC
Maximum Output Power with
8PSK Modulated Signal*
Maximum VGC
Minimum VGC
Gain Range
0
+2.5
-39
42
dBm
dBm
dB
While meeting spectral mask
While meeting spectral mask
Difference between output power at
GC=2.0V and GC=0.2V.
-37
Out-of-Band Emission
Spectrum Emission Mask*
Frequency Spacing
200kHz
250kHz
400kHz
-36
-43
-67
-73
-73
-73
-75
TBD
TBD
TBD
dBc
dBc
dBc
dBc
dBc
dBc
dBc
30kHz BW
30kHz BW
30kHz BW
30kHz BW
100kHz BW
100kHz BW
100kHz BW
8PSK Modulation
600kHz to 1800kHz
1800kHz to 3000kHz
3000kHz to 6000kHz
>6000kHz
Error Vector Magnitude
RMS*
2
-40
4
3
-34
9
%
dB
%
Origin Offset*
Peak*
Output Noise
At F ±20MHz*
C
Relative Noise at:
Maximum Gain
-156
-152
dBc/Hz
dBc/Hz
GC=2.0V, IQ=1.2V
GC=2.0V to 1.4V
8PSK
P-P
Absolute Noise at:
Maximum Gain
-156
-154
dBm
dBm
GC=2.0V, IQ=0V
P-P
All Gain Settings
IQ=1.2V
8PSK
P-P
General Conditions
Local Oscillator
LO LB Input Frequency
RF LB Output Frequency
Input Power
824
824
-6.0
915
915
+3.0
MHz
MHz
dBm
0.0
1.2
IQ Baseband Inputs
8PSK
IQ Level
V
Input IQ signal driven differentially and in
quadrature.
P-P
IQ Common Mode
Input Bandwidth
Baseband Filter Attenuation
* Not tested in Production
1.2
1.0
V
MHz
dB
0.7
20
At 20MHz offset
5-114
Rev A4 041026
RFMD [ RF MICRO DEVICES ]
