RF2424
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
5.5
V
DC
Caution! ESD sensitive device.
Input LO and RF Levels
Operating Ambient Temperature
Storage Temperature
+6.0
-40 to +85
-40 to +150
dBm
°C
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25 °C, V =3V
Carrier Input
CC
Frequency Range
Power Level
Input impedance
Modulation Input
Frequency Range
Reference Voltage (V
700
-6
1000
+6
MHz
dBm
Ω
43 + j1.8
1.6
At 900MHz
5
DC
100
MHz
V
)
REF
Maximum Modulation (I&Q)
V
± 0.3
V
REF
Gain Asymmetry
0.2
1
40
40
dB
°
kΩ
µA
Quadrature Phase Error
Input DC Resistance
Input Bias Current
V
=3V, LO power=-3dBm, LO
CC
RF Output
freq=900MHz, I/Q drive level=0.2V , SSB
P
Output Power
+5.0
+7.5
50
-140
35
30
30
dBm
Ω
dBm/Hz
dB
dB
dB
Output Impedance
Broadband Noise Floor
Sideband Suppression
Carrier Suppression
25
25
25
IM Suppression
DSB output (+9dBm total power)
3
Power Down
Turn On/Off Time
PD Input Resistance
Power Down “ON”
100
ns
kΩ
V
10
1.0
2.7
V
CC
Power Down “OFF”
Power Supply
Voltage
1.2
V
5.5
55
V
mA
Current
45
53
V
V
=3V
=5V
CC
CC
mA
Power Down
10
µA
5-44
Rev A6 010817
RFMD [ RF MICRO DEVICES ]
