Preliminary
RF2416
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +6.0
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Storage Temperature
+10
-40 to +150
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Operating Range
Overall Frequency Range
800
1800
2.7
1000
2000
3.0
MHz
MHz
V
Low Band Operation
High Band Operation
VCC1 HB, VCC2 HB, VCC1 LB
4
Supply Voltage (V
)
2.8
2.8
CC
Power Down Voltage (V
)
2.7
3.0
V
V
HB BIAS, LB BIAS
BIAS
Logic Control Voltage Level
0
3.0
HB SELECT, LB SELECT
o
Operating Ambient Temperature
-40
+85
C
Input Impedance
Output Impedance
50
50
Ω
Ω
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=0V,
950MHz Performance -
High Gain Mode
Z
=Z =50Ω
IN
O
Gain
14
15.5
17
+0.5
dB
dB
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Noise Figure
Reverse Isolation
Input IP3
+0.5
2.0
dB
1.1
21
+5.0
-9
dB
dB
dBm
dB
15
+2.0
-12
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
2:1
2:1
6.0
4.8
mA
900MHz LNA ENABLED, 1900MHz LNA
DISABLED. I + I
CC
PD
T = 25°C, RF=950MHz,
VCC1LB=VCC2LB=2.78V, LBSelect=2.7V,
950MHz Performance -
Bypass Mode
Z
=Z =50Ω
IN
O
Gain
Gain Reduction
Input IP3
Input P1dB
Input VSWR
Output VSWR
Total Current Draw
-8
-6
-3
dB
dBc
dBm
dB
21.5
15.0
+2
12.0
-1
2.5:1
2:1
See Application Notes
4-200
Rev A2 010810
RFMD [ RF MICRO DEVICES ]
