Preliminary
RF2368
Absolute Maximum Ratings
Parameter
Supply Voltage
Rating
-0.5 to +6.0
Unit
Caution! ESD sensitive device.
V
DC
Input RF Level
Storage Temperature
+10
-40 to +150
dBm
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
Operating Range
Overall Frequency Range
1800
2.7
2000
2.86
MHz
V
Supply Voltage (V
)
2.78
2.78
V
, V
CC1 CC2
CC
4
Power Down Voltage (V
)
2.7
2.86
V
BIAS
SELECT
BIAS
Logic Control Voltage Level
Operating Ambient Temperature
Input Impedance
0
-40
2.86
+85
V
°C
Ω
50
50
Output Impedance
Ω
T = 25°C, RF=1850MHz, V =BIAS=2.78V,
1850MHz Performance
CC
SELECT=0V, Z =Z =50Ω
High Gain Mode
IN
O
Gain
17
18
19
+0.5
dB
dB
Gain Variation Over
Temperature Range
Gain Variation Over
Frequency Band
Current Consumption
+0.5
dB
9.0
9.5
1.7
mA
I
+I
CC BIAS
Noise Figure
Reverse Isolation
Input IP3
1.6
20
+1.0
-10
dB
dB
dBm
dB
15
0.0
-13
Input P1dB
T = 25°C, RF=1850MHz, VCC=2.78V,
SELECT=2.7V, Z =Z =50Ω
1850MHz Performance
Bypass Mode
Gain
Gain Reduction
Power Down Current
Input IP3
IN
O
-4.5
22.5
dB
dBc
µA
dBm
dB
21
24
10
12
+5
15.0
+8
Input P1dB
T = 25°C, RF=1960MHz, V =BIAS=2.78V,
1960MHz Performance -
High Gain Mode
Gain
Gain Variation Over
Temperature Range
CC
SELECT=0V, Z =Z =50Ω
IN
O
15.5
16.5
17.5
+0.5
dB
dB
Gain Variation Over
Frequency Band
+0.5
dB
Current Consumption
9.0
9.5
1.7
mA
I
+I
CC BIAS
Noise Figure
Reverse Isolation
Input IP3
1.6
20
+2
dB
dB
dBm
dB
15
+1
-13
Input P1dB
-10
T = 25°C, RF=1960MHz, VCC=2.78V,
SELECT=2.7V, Z =Z =50Ω
1960MHz Performance -
Bypass Mode
Gain
Gain Reduction
Power Down Current
Input IP3
IN
O
-5
21.5
dB
dBc
µA
dBm
dB
20
23
10
14.0
+5
17.0
+8
Input P1dB
4-200
Rev A0 010503
RFMD [ RF MICRO DEVICES ]
