RF2363
0
Typical Applications
• GSM/DCS Dual-Band Handsets
• Cellular/PCS Dual-Band Handsets
• General Purpose Amplification
• Commercial and Consumer Systems
DUAL-BAND 3V LOW NOISE AMPLIFIER
Product Description
The RF2363 is a dual-band Low Noise Amplifier
designed for use as a front-end for 950MHz
GSM/1850MHz DCS applications and may be used for
dual-band cellular/PCS applications. The 900MHz LNA is
a single-stage amplifier; the 1900MHz LNA is a 2-stage
amplifier. The part may also be tuned for applications in
other frequency bands. The device has an excellent com-
bination of low noise figure and high linearity at a very low
supply current. It is packaged in a very small industry
standard SOT 8-lead plastic package.
1.59
1.61
0.365
TEXT*
0.15
0.05
2.80
3.00
0.650
2.60
3.00
3°MAX
0°MIN
1.44
1.04
0.127
*When Pin 1 is in upper
left, text reads downward
(as shown).
0.35
0.55
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: SOT, 8-Lead
Features
• Low Noise and High Intercept Point
• 18dB Gain at 900MHz
• 21dB Gain at 1900MHz
• Low Supply Current
• Single 2.5V to 5.0V Power Supply
• Very Small SOT-23-8 Plastic Package
RF OUT1 1
GND 2
RF OUT2 3
EN1 4
8
7
6
5
RF IN1
GND
RF IN2
EN2
Ordering Information
RF2363
RF2363 PCBA
Dual-Band 3V Low Noise Amplifier
Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev B3 040114
4-347
RFMD [ RF MICRO DEVICES ]
