RF2317
Absolute Maximum Ratings
Caution! ESD sensitive device.
Parameter
Device Current
Rating
250
Unit
mA
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
Input RF Power
+18
dBm
Output Load VSWR
20:1
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
Ambient Operating Temperature
Storage Temperature
-40 to +85
-40 to +150
°C
°C
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
T=+25°C, I =180mA, R =10.2Ω,
50Ω System
3dB Bandwidth
CC
C
Overall (50Ω)
Frequency Range
Gain
DC
3000
15.0
MHz
dB
13.5
14.3
4.9
Noise Figure
Input VSWR
dB
From 100MHz to 1000MHz
1.7:1
Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output VSWR
2.3:1
+47
Appropriate values for the DC blocking capaci-
tors and bias inductor are required to maintain
this VSWR at the intended operating frequency
range.
Output IP
Output IP
dBm
At 100MHz
3
+37
+42
+37
+55
dBm
dBm
dBm
At 500MHz
At 900MHz
F =400MHz, F =500MHz, F
=100MHz
2
1
2
OUT
Output P
+25.5
dBm
At 100MHz
1dB
+24
+22
19.5
dBm
dBm
dB
At 500MHz
At 900MHz
Reverse Isolation
Thermal
Theta
55
°C/W
I
=150mA, P
=1.2W, T
=1.5W, T
=85°C
JC
CC
DISS
AMB
Maximum Junction Temperature
Mean Time To Failures
150
°C
3100
years
T
=+85°C
AMB
Theta
58
°C/W
I
=180mA, P
=85°C
JC
CC
DISS
AMB
Maximum Junction Temperature
Mean Time To Failures
175
380
°C
years
T
=+85°C
AMB
Power Supply (50Ω)
Device Voltage
8.5
9.3
V
V
On pin 13, I =150mA
CC
On pin 13, I =180mA
CC
Operating Current Range
100
180
200
mA
Actual current determined by V and R
CC
C
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