RF2125
2
Typical Applications
• PCS Communication Systems
• Digital Communication Systems
• DECT Cordless Applications
• Commercial and Consumer Systems
• Portable Battery Powered Equipment
HIGH POWER LINEAR AMPLIFIER
2
POWER AMPLIFIERS
Product Description
The RF2125 is a high power, high efficiency linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in digital PCS phone transmitters and base sta-
tions requiring linear amplification operating between
1500MHz and 2200MHz. It will also function as a high
efficiency amplifier for constant envelope applications
such as DECT. The device is packaged in an 8-lead
ceramic package with a backside ground. The device is
self-contained with the exception of the output matching
network and power supply feed line. It produces a typical
output power level of 1W.
.315
.305
.057 MAX
1
.050
ro
du
ct
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
ü
GaAs HBT
SiGe HBT
GaAs MESFET
Si CMOS
Features
• Single 2.7V to 7.5V Supply
• 1W Output Power
• 14dB Gain
• 45% Efficiency
• Power Down Mode
• 1500MHz to 2200MHz Operation
RF IN 1
RF IN 2
PC 3
U
pg
r
S
ee
BIAS
CIRCUIT
ad
ed
8 RF OUT
7 RF OUT
6 RF OUT
5 RF OUT
P
VCC 4
Ordering Information
RF2125
RF2125 PCBA
High Power Linear Amplifier
Fully Assembled Evaluation Board
PACKAGE BASE
GND
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
R
F2
12
4°MAX
0°MIN
.017
.013
Package Style: SOP-8-C
5P
.006
.004
.166
SQ
.017
.013
.004
.000
.180 SQ MAX
Metal lid and base, gold plated
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A7 010112
2-61
RFMD [ RF MICRO DEVICES ]
