Preliminary
RF2117
• 3.6V Analog Handsets
• Analog Communication Systems
• 400MHz Industrial Radios
• Portable Battery Powered Equipment
2
POWER AMPLIFIERS
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400MHz and 500MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
.244
.230
1
.393
.386
.021
.015
.050
.004
.000
EXPOSED
HEATSINK
.287
.271
.158
.152
.065
.055
.087
.071
8°MAX
5°MIN
.035
.016
.0098
.0075
Package Weight
typically 0.22 grams
Si BJT
Si Bi-CMOS
GaAs HBT
SiGe HBT
!"
GaAs MESFET
Si CMOS
• Single 3V to 5.5V Supply
• Up to 2W CW Output Power
• 33dB Small Signal Gain
• >50% Efficiency
• 400MHz to 500MHz Operation
VREG 1
VCC1 2
LTUNE 3
Q1C 4
GND 5
RFIN 6
NC 7
VPD 8
Bias
Circuits
16 NC
15 NC
14 RFOUT
13 RFOUT
12 RFOUT
11 NC
10 NC
9 NC
RF2117
RF2117 PCBA
High Efficiency 400MHz Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A0 991201
2-47
RFMD [ RF MICRO DEVICES ]
