Preliminary
RF2047
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
75
+15
-40 to +85
-60 to +150
mA
dBm
°C
Caution! ESD sensitive device.
°C
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Specification
Typ.
Parameter
Unit
Condition
Min.
Max.
T=25 °C, V =3.6V, I =40mA
Overall
D
CC
Frequency Range
3dB Bandwidth
Gain
DC to 6000
>6
MHz
GHz
dB
dB
dB
dB
dB
dB
dB
4
16.3
16.0
15.3
15.0
14.8
14.0
±0.5
4.2
1.8:1
1.6:1
1.7:1
2.2:1
+26
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
Freq=6000MHz
100MHz to 2000MHz
Freq=2000MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 6000MHz
In a 50Ω system, DC to 3000MHz
In a 50Ω system, 3000MHz to 6000MHz
14.0
Gain Flatness
Noise Figure
Input VSWR
dB
Output VSWR
Output IP
dBm
dBm
dB
Freq=2000MHz±50kHz, P
=-10dBm
TONE
3
Output P
+11.9
19.4
Freq=2000MHz
1dB
Reverse Isolation
Freq=2000MHz
I
=40mA, P
=135mW
DISS
Thermal
CC
Theta
196
112
°C/W
JC
Maximum junction temperature
Mean Time Between Failures
°C
years
4
T
=+85°C
=+25°C
=-40°C
AMB
1.5x10
6
Mean Time Between Failures
Mean Time Between Failures
years
years
T
AMB
9.3x10
11
T
2.9x10
AMB
With 22Ω bias resistor
At pin 3 with I =40mA
Power Supply
Device Operating Voltage
3.0
3.6
40
4.0
V
CC
Operating Current
mA
4-26
Rev A4 010110
RFMD [ RF MICRO DEVICES ]
