RF2046
0
Typical Applications
• Broadband, Low Noise Gain Blocks
• IF or RF Buffer Amplifiers
• Driver Stage for Power Amplifiers
Product Description
The RF2046 is a general purpose, low cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 3000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
0.025
± 0.002
3
GENERAL PURPOSE AMPLIFIER
• Final PA for Low Power Applications
• High Reliability Applications
• Broadband Test Equipment
0.052
0.041
0.070
sq.
45° ± 1°
0.068
± 0.002
0.005
± 0.002
0.200 Sq.
Typ.
0.020
± 0.002
0.015
+0.002
-0.001
0.040
± 0.002
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
3. Dimension applies to ceramic lid minus epoxy coating.
Optimum Technology Matching® Applied
Si BJT
Si Bi-CMOS
InGaP/HBT
GaAs HBT
SiGe HBT
GaN HEMT
GaAs MESFET
Si CMOS
SiGe Bi-CMOS
Package Style: Micro-X Ceramic
Features
• DC to 3000MHz Operation
• Internally matched Input and Output
• 22dB Small Signal Gain
GND
4
MARKING - C6
• 3.0dB Noise Figure
• 10mW Linear Output Power
• Single Positive Power Supply
RF IN 1
3 RF OUT
Ordering Information
2
GND
RF2046
General Purpose Amplifier
RF2046PCBA-41XFully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Rev A11 050207
4-173
RFMD [ RF MICRO DEVICES ]
