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OS10040280GW-013 参数 Datasheet PDF下载

OS10040280GW-013图片预览
型号: OS10040280GW-013
PDF下载: 下载PDF文件 查看货源
内容描述: [GaAs Optical Receiver 40MHz to 1000MHz]
分类和应用:
文件页数/大小: 4 页 / 336 K
品牌: RFMD [ RF MICRO DEVICES ]
 浏览型号OS10040280GW-013的Datasheet PDF文件第1页浏览型号OS10040280GW-013的Datasheet PDF文件第3页浏览型号OS10040280GW-013的Datasheet PDF文件第4页  
OS10040280GW  
Absolute Maximum Ratings  
Caution! ESD sensitive device.  
Parameter  
Rating  
Unit  
Frequency Range  
40 to 1000  
MHz  
mW  
V
Optical Input Power (continuous)  
ESD Sensitivity (Human Body Model; R = 1.5kΩ, C = 100pF)  
Storage Temperature  
5
500  
RoHS (Restriction of Hazardous  
Substances): Compliant per EU Directive  
2011/65/EU.  
-40 to +85  
-20 to +85  
35  
°C  
Operating Mounting Base Temperature  
Minimum Fiber Bending Radius  
Maximum Tensile Strength  
°C  
mm  
N
Exceeding any one or a combination of the Absolute  
Maximum Rating conditions may cause permanent  
damage to the device. Extended application of Absolute  
Maximum Rating conditions to the device may reduce  
device reliability. Specified typical performance or  
functional operation of the device under Absolute  
Maximum Rating conditions is not implied.  
5
Nominal Operating Parameters  
Specification  
Parameter  
Unit  
Condition  
Min  
Typ  
Max  
General Performance  
Responsivity  
V+ = 24V; TMB = 30°C; ZL = 75Ω  
1700  
0
1900  
0.7  
2100  
2.0  
V/W  
dB  
f = 1000MHz, λ = 1310nm  
f = 40MHz to 1000MHz  
f = 40MHz to 1000MHz  
Slope Straight Line  
Flatness Straight Line  
Optical Input Return Loss  
Output Return Loss  
Equivalent Input Noise  
1.0  
dB  
45.0  
15.0  
dB  
17.0  
dB  
f = 40MHz to 1000MHz  
7.5  
pA/ Hz f = 40MHz to 1000MHz  
0.85  
0.90  
1290  
A/W  
A/W  
nm  
λ = (1310 ± 20)nm  
λ = (1550 ± 20)nm  
Spectral Sensitivity  
Optical Wavelength  
1600  
255  
Total Current Consumption (DC)  
PIN Diode Bias Current  
Distortion Data  
245  
mA  
mA  
Total current into hybrid with both pins 4 and 5 connected to V+ = 24V  
10.0  
V+ = 24V; TMB = 30°C; ZL = 75Ω  
fm = 54MHz; f1 = 187.25MHz; f2 = 133.25MHz  
Second Order Distortion[1]  
-74.0  
-70.0  
-70.0  
-66.0  
-65.0  
-80.0  
-82.0  
-82.0  
-80.0  
-78.0  
-72.0  
-68.0  
-67.0  
-63.0  
-62.0  
-78.0  
-80.0  
-80.0  
-78.0  
-76.0  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
dBc  
fm = 446.5MHz; f1 = 97.25MHz; f2 = 349.25MHz  
fm = 548.5MHz; f1 = 109.25MHz; f2 = 439.25MHz  
fm = 746.5MHz; f1 = 133.25MHz; f2 = 613.25MHz  
fm = 854.5MHz; f1 = 133.25MHz, f2 = 721.25MHz  
Third Order Distortion[2]  
fm = 55.25MHz; f1 = 109.25MHz; f2 = 133.25MHz; f3 = 187.25MHz  
fm = 445.25MHz; f1 = 193.25MHz; f2 = 349.25MHz; f3 = 97.25MHz.  
fm = 547.25MHz; f1 = 217.25MHz; f2 = 439.25MHz; f3 = 109.25MHz  
fm = 745.25MHz; f1 = 133.25MHz; f2 = 265.25MHz; f3 = 613.25MHz  
fm = 853.25MHz; f1 = 133.25MHz; f2 = 265.25MHz; f3 = 721.25MHz  
1. Two laser test; each laser with 40% OMI; Popt = 1mW (total).  
2. Three laser test; each laser with 60% OMI; Popt = 1mW (total).  
RF Micro Devices Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421  
For sales or technical support, contact RFMD at +1.336.678.5570 or customerservice@rfmd.com.  
DS140317  
The information in this publication is believed to be accurate. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents or other rights of  
third parties resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended  
application circuitry and specifications at any time without prior notice.  
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