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NLB-400-T1 参数 Datasheet PDF下载

NLB-400-T1图片预览
型号: NLB-400-T1
PDF下载: 下载PDF文件 查看货源
内容描述: 级联宽带的GaAs MMIC放大器的直流到6GHz [CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 6GHz]
分类和应用: 放大器
文件页数/大小: 8 页 / 263 K
品牌: RFMD [ RF MICRO DEVICES ]
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NLB-400  
Absolute Maximum Ratings  
Parameter  
RF Input Power  
Rating  
+20  
Unit  
dBm  
mW  
mA  
Caution! ESD sensitive device.  
Power Dissipation  
300  
3
The information in this publication is believed to be accurate and reliable. How-  
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,  
nor for any infringement of patents, or other rights of third parties, resulting  
from its use. No license is granted by implication or otherwise under any patent  
or patent rights of RFMD. RFMD reserves the right to change component cir-  
cuitry, recommended application circuitry and specifications at any time without  
prior notice.  
Device Current  
70  
Channel Temperature  
Operating Temperature  
Storage Temperature  
200  
°C  
-45 to +85  
-65 to +150  
°C  
°C  
RoHS status based on EUDirective2002/95/EC (at time of this document revi-  
sion).  
Exceeding any one or a combination of these limits may cause permanent  
damage.  
Specification  
Parameter  
Unit  
Condition  
Min.  
Typ.  
Max.  
V =+3.9V, I =47mA, Z =50Ω, T =+25°C  
Overall  
D
CC  
0
A
Small Signal Power Gain, S21  
16.0  
10.8  
17.0  
13.0  
dB  
dB  
dB  
dB  
f=0.1GHz to 1.0GHz  
f=1.0GHz to 4.0GHz  
f=4.0GHz to 6.0GHz  
f=0.1GHz to 2.0GHz  
f=0.1GHz to 4.0GHz  
f=4.0GHz to 6.0GHz  
f=6.0GHz to 10.0GHz  
f=0.1GHz to 4.0GHz  
f=4.0GHz to 6.0GHz  
f=6.0GHz to 10.0GHz  
BW3 (3dB)  
11.5  
Gain Flatness, GF  
Input VSWR  
±0.65  
1.65:1  
1.65:1  
1.75:1  
1.5:1  
1.9:1  
2.2:1  
4.7  
Output VSWR  
Bandwidth, BW  
GHz  
Output Power @  
-1dB Compression, P1dB  
12.0  
14.6  
4.1  
dBm  
dBm  
dB  
f=2.0GHz  
f=6.0GHz  
Noise Figure, NF  
f=3.0GHz  
Third Order Intercept, IP3  
+29.6  
+27.3  
-18  
dBm  
f=2.0GHz  
f=6.0GHz  
Reverse Isolation, S12  
dB  
V
f=0.1GHz to 12.0GHz  
Device Voltage, V  
3.6  
3.9  
4.2  
D
Gain Temperature Coefficient,  
-0.0015  
dB/°C  
δG /δT  
T
MTTF versus Temperature  
@ ICC=50mA  
Case Temperature  
Junction Temperature  
MTTF  
85  
119  
°C  
°C  
>1,000,000  
hours  
Thermal Resistance  
θ
185  
°C/W  
JC  
JT TCASE  
--------------------------  
= θJCC Watt)  
VD ICC  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.  
3-24  
Rev A10 DS070123