NBB-500
Absolute Maximum Ratings
Parameter
RF Input Power
Rating
+20
Unit
dBm
mW
mA
Caution! ESD sensitive device.
Power Dissipation
300
Device Current
70
The information in this publication is believed to be accurate and reliable. How-
ever, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use,
nor for any infringement of patents, or other rights of third parties, resulting
from its use. No license is granted by implication or otherwise under any patent
or patent rights of RFMD. RFMD reserves the right to change component cir-
cuitry, recommended application circuitry and specifications at any time without
prior notice.
Channel Temperature
Operating Temperature
Storage Temperature
200
°C
-45 to +85
-65 to +150
°C
°C
RoHS status based on EUDirective2002/95/EC (at time of this document revi-
sion).
Exceeding any one or a combination of these limits may cause permanent
damage.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
V =+3.9V, I =35mA, Z =50Ω, T =+25°C
Overall
D
CC
0
A
Small Signal Power Gain, S21
19.0
16.0
20.5
19.5
dB
dB
dB
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 2.0GHz
f=2.0GHz to 4.0GHz
f=0.1GHz to 3.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 10.0GHz
BW3 (3dB)
18.5
Gain Flatness, GF
±0.8
Input and Output VSWR
1.70:1
1.45:1
1.65:1
4.2
Bandwidth, BW
GHz
Output Power @
-1dB Compression, P1dB
12.3
14.0
3.2
dBm
dBm
dB
f=2.0GHz
f=6.0GHz
Noise Figure, NF
f=3.0GHz
Third Order Intercept, IP3
Reverse Isolation, S12
+26.5
-17.0
3.9
dBm
dB
f=2.0GHz
f=0.1GHz to 10.0GHz
Device Voltage, V
3.6
4.2
V
D
Gain Temperature Coefficient,
-0.0015
dB/°C
δG /δT
T
MTTF versus Temperature
@ ICC=35mA
Case Temperature
Junction Temperature
MTTF
85
120
°C
°C
>1,000,000
hours
Thermal Resistance
θ
256
°C/W
JC
JT – TCASE
--------------------------
= θJC(°C ⁄ Watt)
VD ⋅ ICC
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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