NBB-400
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
Power Dissipation
Device Current
Channel Temperature
Operating Temperature
Storage Temperature
+20
300
70
200
dBm
mW
mA
°C
°C
°C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. RoHS marking based on EUDirective2002/95/EC
(at time of this printing). However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
-45 to +85
-65 to +150
Exceeding any one or a combination of these limits may cause permanent damage.
Specification
Parameter
Unit
Condition
Min.
Typ.
Max.
V =+3.9V, I =47mA, Z =50Ω, T =+25°C
Overall
D
CC
0
A
Small Signal Power Gain, S21
15.5
16.7
16.5
16.0
13.5
±0.8
1.45:1
1.30:1
1.90:1
7.5
dB
dB
dB
dB
dB
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 8.0GHz
f=0.1GHz to 5.0GHz
f=0.1GHz to 4.0GHz
f=4.0GHz to 6.0GHz
f=6.0GHz to 12.0GHz
BW3 (3dB)
12.5
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
GHz
Output Power @
-1dB Compression, P1dB
13.0
14.6
13.5
4.3
dBm
dBm
dBm
dB
f=2.0GHz
f=6.0GHz
f=9.0GHz
f=3.0GHz
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
+28.1
-17.5
3.9
dBm
dB
V
f=2.0GHz
f=0.1GHz to 12.0GHz
Device Voltage, V
3.6
4.2
D
Gain Temperature Coefficient,
-0.0015
dB/°C
δG /δT
T
MTTF versus Temperature
@ ICC=50mA
Case Temperature
Junction Temperature
MTTF
85
131
>1,000,000
°C
°C
hours
Thermal Resistance
θ
251
°C/W
JC
JT – TCASE
-------------------------- = θJC(°C ⁄ Watt)
VD ⋅ ICC
4-34
Rev A8 060124
RFMD [ RF MICRO DEVICES ]
