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LQG11A47NJ00 参数 Datasheet PDF下载

LQG11A47NJ00图片预览
型号: LQG11A47NJ00
PDF下载: 下载PDF文件 查看货源
内容描述: 225MHz TO 1215MHz , 9W的GaN WIDEBAND [225MHz TO 1215MHz, 9W GaN WIDEBAND]
分类和应用: 电感器测试射频感应器
文件页数/大小: 11 页 / 1628 K
品牌: RFMD [ RF MICRO DEVICES ]
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RFHA1006  
Absolute Maximum Ratings  
Parameter  
Rating  
150  
Unit  
V
Caution! ESD sensitive device.  
Exceeding any one or a combination of the Absolute Maximum Rating conditions may  
cause permanent damage to the device. Extended application of Absolute Maximum  
Rating conditions to the device may reduce device reliability. Specified typical perfor-  
mance or functional operation of the device under Absolute Maximum Rating condi-  
tions is not implied.  
Drain Voltage (V )  
D
Gate Voltage (V )  
-8 to +2  
10  
V
G
Gate Current (I )  
mA  
G
The information in this publication is believed to be accurate and reliable. However, no  
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any  
infringement of patents, or other rights of third parties, resulting from its use. No  
license is granted by implication or otherwise under any patent or patent rights of  
RFMD. RFMD reserves the right to change component circuitry, recommended appli-  
cation circuitry and specifications at any time without prior notice.  
Operational Voltage  
RF- Input Power  
32  
30  
V
dBm  
Ruggedness (VSWR)  
Storage Temperature Range  
12:1  
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive  
2002/95/EC.  
-55 to +125  
-40 to +85  
°C  
°C  
Operating Temperature Range (T )  
L
Operating Junction Temperature (T )  
200  
°C  
J
Human Body Model  
Class 1A  
6
MTTF (T < 200°C, 95% Confidence Limits)*  
Hours  
°C/W  
J
3 x 10  
Thermal Resistance, R (junction to case)  
6
TH  
measured at T = 85°C, DC bias only  
C
* MTTF - median time to failure for wear-out failure mode (30% I  
Refer to product qualification report for FIT(random) failure rate.  
degradation) which is determined by the technology process reliability.  
DSS  
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage  
and current must not exceed the maximum operating values.  
Bias Conditions should also satisfy the following expression: P  
< (T - T )/R J - C and T = T  
DISS  
J C TH C CASE  
Specification  
Typ.  
Parameter  
Unit  
Condition  
Min.  
Max.  
Recommended Operating  
Conditions  
Drain Voltage (V  
)
28  
-3  
32  
-2  
V
V
DSQ  
Gate Voltage (V  
)
-5  
GSQ  
Drain Bias Current  
88  
mA  
RF Input Power (P  
)
28  
dBm  
IN  
Input Source VSWR  
10:1  
RF Performance  
Characteristics  
Frequency Range  
Linear Gain  
225  
1215  
-11  
MHz  
dB  
Small signal 3dB bandwidth  
16  
14  
P
P
P
= 30dBm  
OUT  
OUT  
OUT  
Power Gain  
dB  
dB  
= 39.5dBm  
Gain Flatness  
3
= 30dBm, 225MHz to 1215MHz  
Gain Variation with Temperature  
-0.02  
dB/°C  
dB  
Input Return Loss (S  
Output Power  
)
11  
39.5  
60  
dBm  
%
225MHz to 1215MHz  
225MHz to 1215MHz  
Power Added Efficiency (PAE)  
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical  
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.  
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