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GRM32NR72A104KA01L 参数 Datasheet PDF下载

GRM32NR72A104KA01L图片预览
型号: GRM32NR72A104KA01L
PDF下载: 下载PDF文件 查看货源
内容描述: 30W的GaN宽带功率放大器 [30W GaN WIDEBAND POWER AMPLIFIER]
分类和应用: 放大器功率放大器
文件页数/大小: 14 页 / 1806 K
品牌: RFMD [ RF MICRO DEVICES ]
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RF3931
30W GaN WIDEBAND POWER AMPLIFIER
Package Style: Hermetic 2-Pin Flanged Ceramic
Features
Broadband Operation DC to
3.5GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology
Gain = 15dB at 2GHz
48V Operation Typical
Performance at 900MHz
• Output Power 50W
• Drain Efficiency 65%
• -40°C to 85°C Operation
RF IN
VGQ
Pin 1 (CUT)
GND
BASE
RF OUT
VDQ
Pin 2
Functional Block Diagram
Product Description
Applications
Commercial Wireless
Infrastructure
Cellular and WiMAX
Infrastructure
Civilian and Military Radar
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and
Medical
The RF3931 is a 48V 30W high power discrete amplifier designed for commercial
wireless infrastructure, cellular and WiMAX infrastructure, industrial/scien-
tific/medical, and general purpose broadband amplifier applications. Using an
advanced high power density Gallium Nitride (GaN) semiconductor process, these
high-performance amplifiers achieve high efficiency and flat gain over a broad fre-
quency range in a single amplifier design. The RF3931 is an unmatched GaN tran-
sistor packaged in a hermetic, flanged ceramic package. This package provides
excellent thermal stability through the use of advanced heat sink and power dissi-
pation technologies. Ease of integration is accomplished through the incorporation
of simple, optimized matching networks external to the package that provide wide-
band gain and power performance in a single amplifier.
Ordering Information
RF3931S2
2-Piece sample bag
RF3931SB
5-Piece bag
RF3931SQ
25-Piece bag
RF3931SR
100 Pieces on 7” short reel
RF3931TR7
750 Pieces on 7” reel
RF3931PCK-411 Fully assembled evaluation board optimized for 2.14GHz; 48V
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120406
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or customerservice@rfmd.com.
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