FPD30002W
Power pHEMT
FPD3000
2W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx3000μm Schottky barrier gate, defined by high -
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD3000 is also available
in the low-cost plastic SOT89 package.
Features
32.5dBm Linear Output
Power at 12GHz
6.5dB Power Gain at 12GHz
8dB Max Stable Gain at
12GHz
42dBm O
IP3
30% Power-Added Efficiency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Parameter
Electrical Specifications
P
1dB
Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P
1dB
(G
1dB
)
Power-Added Efficiency (PAE)
OIP
3
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance (G
M
)
Gate-Source Leakage Current (I
GSO
)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity (θJC)
Min.
31.5
7.0
6.0
Specification
Typ.
32.5
8.0
6.5
30
42
44
Max.
Unit
dBm
dB
dB
%
dBm
dBm
Condition
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=8V, I
DS
=50% I
DSS
Matched for optimal power, tuned for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0 V
V
GS
=-5V
V
DS
=1.3V, I
DS
=3mA
I
GS
=3mA
I
GD
=3mA
V
DS
>6V
750
930
1.5
800
10
|1.0|
1100
mA
A
ms
μA
V
V
V
°C/W
|12.0|
|14.5|
|14.0|
|16.0|
20
Note: T
AMBIENT
=22°C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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