FPD15001W
Power pHEMT
FPD1500
1W POWER pHEMT
Package Style: Bare Die
Product Description
The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transis-
tor (pHEMT), featuring a 0.25μmx1500μm Schottky barrier gate, defined by high -
resolution stepper-based photolithography. The recessed gate structure minimizes
parasitics to optimize performance. The epitaxial structure and processing have
been optimized for reliable high-power applications. The FPD1500 is also available
in the low-cost plastic SOT89 and DFN packages.
Features
29dBm Linear Output Power
at 12GHz
9dB Power Gain at 12GHz
12.5dB Max Stable Gain at
12GHz
41dBm O
IP3
35% Power-Added Efficiency
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
Applications
Narrowband and Broadband
High-Performance Amplifiers
SATCOM Uplink Transmitters
PCS/Cellular Low-Voltage
High-Efficiency Output Ampli-
fiers
Medium-Haul Digital Radio
Transmitters
Parameter
Power at P
1dB
Gain Compression
Maximum Stable Gain (S21/S12)
Power Gain at P
1dB
PAE
OIP
3
from 15dB to 5dB below P
1dB
Saturated Drain-Source Current (I
DSS
)
Maximum Drain-Source Current
(I
MAX
)
Transconductance
Gate-Source Leakage Current (I
GSO
)
Pinch-Off Voltage (V
P
)
Gate-Source Breakdown Voltage
(V
BDGS
)
Gate-Drain Breakdown Voltage
(V
BDGD
)
Thermal Resistivity (θJC) *
Min.
28.5
11.5
8.0
Specification
Typ.
30.0
12.5
9.0
45
41
43
Max.
Unit
dBm
dB
dB
%
dBm
dBm
Condition
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
V
DS
=8V, I
DS
=50% I
DSS
, P
OUT
=P
1dB
V
DS
=8V, I
DS
=50% I
DSS
Matched for optimal power, tuned for best IP
3
V
DS
=1.3V, V
GS
=0V
V
DS
=1.3V, V
GS
≈+1V
V
DS
=1.3V, V
GS
=0 V
V
GS
=-5V
V
DS
=1.3V, I
DS
=1.5mA
I
GS
=1.5mA
I
GD
=1.5mA
V
DS
>6V
375
465
750
400
1
550
mA
mA
ms
15
|1.3|
μA
V
V
V
°C/W
|0.7|
|12.0|
|14.5|
|1.0|
|14.0|
|16.0|
42
Note: T
AMBIENT
=22°C, RF specifications measured at f=12GHz using CW signal.
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Rev A1 DS090612
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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